(一)引言 非晶硅少子扩散长度对非晶硅太阳电池的性能有重要影响,它是表征非晶硅材料质量的重要参数。最近Dresner和Moore分别用表面光电压法(SPV法)测量非晶硅少于扩散长度获得成功。但前者需要超高真空系统,样品表面要经过溅射和退火,后者使用非晶硅液体肖特基势垒,装置较烦。我们试用顶层淀积了金属镍的非晶硅薄膜作样品,利用镍和非晶硅膜构成的金属肖特基势垒进行表面光电压测量,获得成功。这样 (A) Introduction The diffusion length of amorphous silicon minority has an important impact on the performance of amorphous silicon solar cells, it is an important parameter to characterize the quality of amorphous silicon materials. Recently, Dresner and Moore respectively succeeded in measuring amorphous silicon less than the diffusion length by the surface photovoltage method (SPV method). However, the former requires an ultra-high vacuum system. The sample surface is subjected to sputtering and annealing. The latter uses an amorphous silicon liquid Schottky barrier, which renders the device more annoying. We experimented with the top of the deposited amorphous nickel metal thin film as a sample, the use of nickel and amorphous silicon Schottky barrier metal surface photovoltage measurements, the success. such