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通过优化ＧａＡｓ表面制备工艺、反应管清洁处理工艺、ＧａＡｓ表面预处理工艺、生长条件及优选ＧａＡｓ衬底方向等措施，在水平与常压ＭＯＶＰＥ装置中，用二乙基锌（ＤＥＺｎ）、二甲基镉（ＤＭＣｄ）、二异丙基碲（ＤｉＰＴｅ）和元素汞，采用互扩散多层工艺（ＩＭＰ），在ＧａＡｓ衬底上生长出了ＭＣＴ／ＣｄＴｅ／ＧａＡｓ，比较了采用优化工艺前后薄膜的电子显微镜形貌相，表明采用优化工艺后薄膜的表面形貌有了明显改进。
By optimizing the GaAs surface preparation process, the reaction tube cleaning process, the GaAs surface pretreatment process, the growth conditions, and the preferred GaAs substrate orientation, in a horizontal and an ordinary pressure MOVPE apparatus, diethylzinc (DEZn) (DMC), DiPTe and elemental mercury (MC) were grown on GaAs substrate by using interdiffusion multi-layer process (IMP) The morphology of the electron microscope shows that the surface morphology of the film has been significantly improved with the optimized process.