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载流子迁移率的测量对有机半导体材料及器件的研究极为重要。在总结目前有机半导体迁移率测量方法优缺点的基础之上,本文提出了一种测量有机半导体中载流子迁移率的新方法:用真空蒸镀法制作结构为“金属-有机半导体-金属”的肖特基接触有机半导体器件,通过选取适当的理论模型进行数值计算,然后用理论计算的结果对实验测得的该器件IV特性进行数值拟合,从而得到该有机半导体材料中载流子的迁移率,以及该材料的其他输运参数,如陷阱密度、陷阱特征深度等。本文利用这种方法测量了酞菁铜(CuPc)的空穴迁移率,并得到了CuPc的陷阱密度、陷阱特征深度等参数。
Carrier mobility measurement of organic semiconductor materials and devices is extremely important. On the basis of summarizing the merits and demerits of current methods for measuring the mobility of organic semiconductors, a new method for measuring the carrier mobility in organic semiconductors is proposed in this paper. The structure of the semiconductors is “ ”Schottky contact organic semiconductor devices, by selecting the appropriate theoretical model for numerical calculation, and then theoretical calculations of the IV characteristics of the device measured by the value of the fitting to obtain the organic semiconductor material carrier Submigration, and other transport parameters of the material, such as trap density, depth of trap features, and the like. In this paper, the hole mobility of copper phthalocyanine (CuPc) was measured by this method, and the trapped density of CuPc and the depth of trap feature were obtained.