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同轴单开端型Ge(Li)探测器的制作过程是:先将施主杂质锂蒸发到P型锗单晶表面,经扩散形成N~+P结构,然后在反向偏压作用下,锂离子由扩散区(N~+)向中心漂移,逐渐补偿受主杂质镓,形成PIN结构。它实际上相当一个固体电离宝,其I区为灵敏区。由于在Ge中产生一个电子-空穴对所需的平均能量(2.96eV)比在气体电离室中产生一个电子-离子对所需的能量小十倍,比闪烁计数器产生光电子所需能量小几十倍,因此,Ge(Li)探测器就有比这些探测器高得多的能量分辨率。
The fabrication process of a coaxial single open-ended Ge (Li) detector is as follows: the donor impurity lithium is firstly evaporated onto the surface of the P-type germanium single crystal and is diffused to form an N ~ + P structure; then, under reverse bias, lithium ions Drift from the diffusion region (N ~ +) toward the center, the acceptor gallium is gradually compensated to form the PIN structure. It is actually a solid ionization treasure, its I zone is sensitive area. Since the average energy required to generate one electron-hole pair in Ge (2.96 eV) is ten times less than the energy required to generate one electron-ion pair in the gas ionization chamber and less than the energy required for the scintillation counter to generate photoelectrons Therefore, Ge (Li) detectors have much higher energy resolution than these detectors.