报道了基于单根Ga Sb纳米线的硅基以及聚对苯二甲酸乙二醇酯(PET)基柔性光电探测器的设计与研制.所设计的硅基及柔性光电探测器均具有响应速度快、响应度高、光响应稳定,以及从紫外到近红外的宽光谱响应的特点.此外,在波长为350 nm及光强为0.2 m W/cm2的光照射下,硅基器件显示了很高的响应度,可达到7350 A/W.而柔性器件在700 nm光照下,探测度可以达到9.67×109 jones.研究结果表明,本文所设计的具有高响应度、宽光谱响应、长期稳定性的Ga Sb纳米线光电探测器,在构建高性能光传感器以及其他光电器件上有着潜在的应用前景. The design and development of silicon-based and polyethylene terephthalate (PET) -based flexible photodetectors based on single Ga Sb nanowires have been reported.The designed silicon-based and flexible photodetectors are both fast response , High responsivity, stable photoresponse, and wide spectral response from UV to near IR, and the silicon-based devices show high levels of light at 350 nm and a light intensity of 0.2 mW / cm2 Of the responsivity can reach 7350 A / W, while the flexible device can reach 9.67 × 109 jones under 700 nm illumination.The results show that the high sensitivity, wide spectral response and long-term stability Ga Sb nanowire photodetectors have potential applications in the construction of high performance optical sensors and other optoelectronic devices.