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本文通过对正面光照型(由p~+-InGaAs层注入光子)和背面光照型(由n~+-InP层注入光子)两种结构的比较,讨论了高性能正面光照型InGaAs PIN光电二极管的设计原则和理论模型.重点分析了器件反向I-V特性、量子效率、脉冲响应时间等问题.所研制的器件性能如下:在工作偏置V_(op)=-5V时,暗电流密度J_D=2.5×10~(-6)A/cm~2;结电容C_j=0.7pF;量子效率η=85%(λ=1.3μm);脉冲响应时间△τ=100ps
In this paper, we compare the two structures of frontal illumination (photons injected from p ~ + -InGaAs layer) and backside illumination (photons injected from n ~ + -InP layer), and discuss the advantages of high performance front-illuminated InGaAs PIN photodiodes Design principle and theoretical model of the device.The problems of reverse IV characteristics, quantum efficiency and impulse response time of the device are mainly analyzed.The performance of the device is as follows: Dark current density J_D = 2.5 at operating bias V_ (op) = -5 V × 10-6 A / cm 2; junction capacitance C_j = 0.7pF; quantum efficiency η = 85% (λ = 1.3μm); impulse response time △ τ = 100ps