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日立有限公司在实验室试制成功的Hi-Bi-CMOS DRAM技术最近应用于生产1Mb DRAM,存取时间达35ns;应用1.3μm规则软件差错率较低。新芯片由一般的MOS DRAM单位阵列和Hi-Bi-CMOS电路组成,其存取时间比同类产品小一半。
Hi-Bi-CMOS DRAM technology successfully manufactured by Hitachi Ltd. in the laboratory has been recently applied to the production of 1Mb DRAM with an access time of 35ns. The application of the 1.3μm rule software has a lower error rate. The new chip by the general unit of MOS DRAM array and Hi-Bi-CMOS circuit, access time less than similar products in half.