利用电流电压（ Ｉ Ｖ）、电致发光（ Ｅ Ｌ）和深能级瞬态傅里叶谱（ Ｄ Ｌ Ｔ Ｆ Ｓ）技术研究ⅢⅤ族氮化物基异质结深电子态．观察到大电流（直流）冲击引起电流电压和电致发光特性的弛豫． Ｄ Ｌ Ｔ Ｆ Ｓ研究表明，电流冲击之前，样品存在一个位于导带下 １１ｅ Ｖ 处深能级（ Ｅ１），它具有 ２７×１０１３ ｃｍ － ３ 浓度和 ５×１０－ １４ ｃｍ ２ 俘获截面．经电流冲击（７７ Ｋ，２００ｍ Ａ 和 ４０ｍ ｉｎ）后， Ｅ１ 浓度为４２１×１０１３ｃｍ － ３ ，约增加了 ２ 倍．实验结果表明 Ｅ１ 浓度的增加与样品 Ｉ Ｖ、 Ｅ Ｌ 特性弛豫是一致的 The deep electron states of group III-nitride heterojunctions were studied by current-voltage (I-V), electroluminescence (E L) and deep level transient Fourier spectroscopy (D L T F S) It has been observed that high current (DC) impact causes relaxation of the current-voltage and electroluminescence properties. The D L T F S study showed that there was a deep level (E1) of 11e V below the conduction band before current impact, with a concentration of 27 × 1013 cm -3 and a density of 5 × 10-14 cm 2 Capture section. After the current impact (77 K, 200m A and 40m in), the E1 concentration was 4  21 × 1013cm - 3, an increase of about 2 times. The experimental results show that the increase of E1 concentration is consistent with the relaxation of I V and E L samples