论文部分内容阅读
The electrical characterization of AlGaN/GaN interface is reported.The dependence of two-dimensional electron gas(2-DEG) density at the interface on the Al mole fraction and thickness of AIGaN layer as well as on the thickness of GaN cap layer is presented.This information can be used to design and fabricate AlGaN/GaN based MODFET(modulation doped field effect transistor) for optimum DC and RF characteristics.
The electrical characterization of AlGaN / GaN interface is reported. Dependence of two-dimensional electron gas (2-DEG) density at the interface on the Al mole fraction and thickness of AIGaN layer as well as on the thickness of GaN cap layer is presented . This information can be used to design and fabricate an AlGaN / GaN based MODFET (modulated doped field effect transistor) for optimum DC and RF characteristics.