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在500～1000℃的温度范围内,把经热生长二氧化硅膜的单晶硅片置干氮中退火,然后用电子束蒸铝制成MOS结构。用三角波电压扫描法(TVS)测量可动离子密度(N_m),发现N_m的最大值出现在600～800℃的退火温度之间。用HF溶液腐蚀炉管可减小N_m和退火温度对N_m的影响。改变退火时间(30和120min)和气氛(O_2,O_2+2％C_2H_3Cl_3),N_m没有明显变化。双重温度退火的实验表明:铝金属化前的最后一次退火决定可动离子沾污水平。提出了一个定性的平衡模型来解释我们的实验结果。
In the temperature range of 500 to 1000 ° C, the silicon single crystal wafer grown by thermal growth is set in dry nitrogen and annealed by electron beam evaporation to form a MOS structure. Measurement of the movable ion density (N_m) by triangular wave voltage scanning (TVS) revealed that the maximum value of N_m appeared between 600 ~ 800 ℃ annealing temperature. Corrosion of the tube with HF solution can reduce the effect of Nm and annealing temperature on Nm. The annealing time (30 and 120min) and the atmosphere (O_2, O_2 + 2% C_2H_3Cl_3) did not change obviously. Experiments with dual temperature annealing show that the last anneal before aluminum metallization determines the level of mobile ion contamination. A qualitative equilibrium model is proposed to explain our experimental results.