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利用金属有机化合物气相外延技术研究了 Al Ga N/ Ga N高电子迁移率晶体管 (HEMT)结构的外延生长及器件制作 ,重点比较了具有不同 Al Ga N层厚度的 HEMT器件的静态特性 .实验发现具有较薄 Al Ga N隔离层的结构表现出较好的器件特性 .栅长为 1μm的器件获得了 6 5 0 m A/ m m的最大饱和电流密度和 10 0 m S/ mm的最大跨导 .
The epitaxial growth of AlGaN / GaN HEMTs and fabrication of devices were investigated by metal organic compound vapor phase epitaxy, and the static characteristics of HEMT devices with different AlGaN layer thicknesses were compared. Structures with thinner AlGaN isolation layers exhibit better device characteristics. Devices with a gate length of 1 μm achieved a maximum saturation current density of 650 mA / mm and a maximum transconductance of 10 0 S / mm.