研究了InAs/GaAs量子点光致发光光谱中出现的多峰结构.观察到随着激发功率的增加光谱中发光峰的数目逐渐增多并且部分发光峰的峰位随激发功率的增加向高能量方向移动.解释了各发光峰的来源并结合量子点能级结构的特点,计算了量子点中电子和空穴各子带间的能级间距. The multi-peak structure of the InAs / GaAs quantum dots photoluminescence spectra was studied. It was observed that the number of luminescence peaks in the InAs / GaAs quantum dots increased gradually with the increase of the excitation power and the peak positions of some of the luminescence peaks increased with the excitation power toward the high energy direction The source of each luminescence peak was explained and the energy level spacing between the electron and hole subbands in the quantum dot was calculated according to the characteristics of the quantum level structure.