【摘 要】
：
A novel silicon-on-insulator (SOI) trench metal-oxide-semiconductor field effect transistor (MOSFET) with a reduced specific on-resistance (Ron,sp) is presented
【机 构】
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State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Scien
论文部分内容阅读
A novel silicon-on-insulator (SOI) trench metal-oxide-semiconductor field effect transistor (MOSFET) with a reduced specific on-resistance (Ron,sp) is presented.It features an oxide-filled trench and a non-depleted embedded p-type island (p-SOI).The oxide trench folds the drift region into a U-shape,resulting in a reduction in cell pitch and Ron,sp.The non-depleted p-island is employed to further reduce Ron,sp by increasing the optimized doping concentration of the drift region without deteriorating the breakdown voltage (BV).The simulation results show that the p-SOI decreases the Ron,sp to 10.2mΩ.cm2 from 17.4mΩ.cm2 of the conventional SOI MOSFET at the same BV.
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