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采用射频磁控溅射用x=0.00～0.45的MgxZn1-xO陶瓷靶在Si(100)和石英衬底上生长MgxZn1-xO薄膜。采用X射线衍射谱(XRD)、透射谱和光电导谱对样品进行表征。结果表明用MgxZn1-xO薄膜在x≤0.325时具有单一(002)取向的六方结构,其禁带宽度Eg随x增加而增加,薄膜表面在入射光能量大于禁带宽度时有光电响应,并且在x=0.325时得到了禁带宽度在4.9eV的MgxZn1-xO薄膜。在x>0.325时出现立方相结构,禁带宽度有所减少,说明此时已为混相薄膜。
The MgxZn1-xO films were grown on Si (100) and quartz substrates by RF magnetron sputtering with MgxZn1-xO ceramic targets at x = 0.00 ~ 0.45. The samples were characterized by X-ray diffraction (XRD), transmission and photoconductivity spectroscopy. The results show that the hexagonal structure of MgxZn1-xO thin films with a single (002) orientation at x≤0.325 increases with the increase of x, and the surface of the film has a photoelectrical response when the incident light energy is greater than the forbidden band width. At x = 0.325, a MgxZn1-xO thin film with a forbidden band width of 4.9 eV was obtained. When x> 0.325, the cubic phase structure appears, and the forbidden band width decreases, indicating that the mixed phase film has been made.