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对磁控溅射生长在单晶Si( 0 0 1 )衬底上的CNx 薄膜样品的化学结合状态和结构进行了研究 .Fourier变换红外光谱 (FTIR)显示CNx 薄膜中的N原子与处于sp1,sp2 ,sp3 杂化状态的C原子相结合 .近边缘X光吸收精细结构 (NEXAFS)显示 ,π 共振与薄膜生长温度 (Ts)有关 ,在T =35 0℃时π 共振的强度值为最低 .利用高分辨电子显微镜 (HREM)观察到CNx 薄膜具有两种显微结构、在生长温度小于 2 0 0℃时为非晶结构 ,薄膜的硬度较低 .而在生长温度大于2 0 0℃时为类turbostratic结构 ,此时薄膜的硬度较高 .最后对CNx 薄膜结构和硬度的关系进行了讨论 .
The chemical bonding state and structure of the samples grown by magnetron sputtering on a single-crystal Si (001) substrate were investigated by Fourier transform infrared spectroscopy (FTIR) sp2 and sp3 hybrid states.The near-edge X-ray absorptive fine structure (NEXAFS) shows that the π resonance is related to the film growth temperature (Ts), and the π resonance intensity is the lowest at T = 35 0 ℃. The CNx films were characterized by two kinds of microstructures with high resolution electron microscopy (HREM) and amorphous structures with the growth temperature less than 200 ° C, and the hardness of films was lower than that of the films with HRT of 200 ° C Turbostratic structure, at this time, the hardness of the film is higher.Finally, the relationship between CNx film structure and hardness is discussed.