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提出了一种作为无源射频(RFID)识别标签电源的光电二极管。此方案采用光电转换获取能量的方式替代传统电磁辐射获得能量的方式,克服了传统方案中RFID读写器辐射强且RFID Tag抗干扰能力差的缺点。光电二极管采用标准UMC 0.18μm CMOS工艺制作在RFID Tag上。研究了光电二极管的光伏及伏安特性,并给出了实验结果;使用低压测试电路对制作完毕的PD进行了功率输出性能实验,实验结果证明PD满足设计指标和后续电路的使用要求;对实验数据进行系统建模和参数估计,建立了可以应用于Cadence仿真环境的光电二极管模型;最后,利用仿真模型进行光标签的设计,流片测试结果证明了光标签的可行性。
A photodiode is proposed as a passive RFID (Radio Frequency Identification) tag power supply. The solution adopts the method that the photoelectric conversion obtains the energy instead of the traditional electromagnetic radiation to obtain the energy and overcomes the shortcoming of the traditional solution that the RFID reader has strong radiation and the RFID tag has poor anti-interference ability. Photodiodes are fabricated on RFID tags using standard UMC 0.18μm CMOS process. The photovoltaic and volt-ampere characteristics of the photodiode were studied and the experimental results were given. The power output performance of the fabricated PD was tested by the low-voltage test circuit. The experimental results show that the PD meets the design requirements and the requirements of subsequent circuits. Data are used to model the system and estimate the parameters. The photodiode model which can be used in Cadence simulation environment is established. Finally, the simulation model is used to design the light label.