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采用脉冲激光沉积法(PLD)在玻璃衬底上通过室温溅射和原位退火制备了ZnTe薄膜。通过X射线衍射(XRD)、原子力显微镜(AFM)、紫外-可见分光光度计和荧光分光光度计等研究了退火温度对薄膜结构和性能的影响。结果表明:薄膜具有明显的<110>择优生长特征。随着退火温度的升高,薄膜结晶质量逐渐提高,晶粒长大,透过率增加;但过高的退火温度降低了晶体的结晶质量和透过率。当退火温度为280℃时,ZnTe薄膜具有最好的结晶质量,平均透过率达到90%左右。
ZnTe thin films were prepared by pulsed laser deposition (PLD) on glass substrates by room temperature sputtering and in-situ annealing. The effects of annealing temperature on the structure and properties of the films were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), UV-visible spectrophotometer and fluorescence spectrophotometer. The results show that: the film has obvious <110> preferred growth characteristics. With the increase of annealing temperature, the crystalline quality of the films gradually increases, and the grain growth and the transmittance increase; however, too high annealing temperature decreases the crystal quality and transmittance of the crystals. When the annealing temperature is 280 ℃, ZnTe film has the best crystal quality, the average transmittance of about 90%.