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,Extrinsic Base Surface Passivation in High SpeedType-Ⅱ GaAsSb/InP DHBTs Using an InGaAsP Ledge Stru
【机 构】
：
Microwave Devices and Integrated Circuits Department,Institute of Microelectronics,Chinese Academy o
【出 处】
：
中国物理快报（英文版）
【发表日期】
：
2010年5期
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