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为了适应薄膜晶体管液晶显示器窄边框化以及面板布线精细化的趋势,以及利用较少光刻次数生产出高品质的产品,本文研究了利用反应离子刻蚀栅绝缘层过孔。介绍了栅绝缘层过孔刻蚀的原理,通过实验以及测试研究与分析了刻蚀过刻量、刻蚀反应压力以及刻蚀气体比例等因素对栅绝缘层过孔刻蚀坡度角的影响。实验结果表明:当SF6气体比例为M3、反应压强为p3,制备的栅绝缘过孔坡度角较理想。
In order to meet the narrow frame of the thin film transistor liquid crystal display and panel wiring fine trend, and the use of less lithography to produce high-quality products, the paper studied the use of reactive ion etching gate insulating layer vias. The principle of via etching in gate insulating layer is introduced. The effects of over etching amount, etching reaction pressure and etching gas proportion on etching angle of via hole in gate insulating layer are studied and analyzed through experiments and tests. The experimental results show that when the ratio of SF6 gas is M3 and the reaction pressure is p3, the gradient angle of the gate insulating via is better.