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将Ti硅化物-p型体区形成的反偏肖特基势垒结构引入绝缘体上硅动态阈值晶体管.传统栅体直接连接DTMOS,为了避免体源二极管的正向开启,工作电压应当低于0.7V.而采用反偏肖特基势垒结构,DTMOS的工作电压可以拓展到0.7V以上.实验结果显示,室温下采用反偏肖特基势垒SOIDTMOS结构,阈值电压可以动态减小200mV.反偏肖特基势垒SOIDTMOS结构相比于传统模式,显示出优秀的亚阈值特性和电流驱动能力.另外,对浮体SOI器件、传统模式SOI器件和反偏肖特基势垒SOIDTMOS的关态击穿特性进行了比较.
Reverse Schottky barrier structure formed by Ti silicide-p type body region is introduced into the silicon on-insulator dynamic threshold transistor. The conventional body is directly connected to the DTMOS. In order to avoid the forward turn on of the body diode, the operating voltage should be lower than 0.7 V. With the reverse-biased Schottky barrier structure, the operating voltage of DTMOS can be extended to more than 0.7 V. The experimental results show that the threshold voltage can be dynamically reduced by 200 mV at room temperature using the reverse bias Schottky barrier SOIDTMOS structure The partial Schottky barrier SOIDTMOS structure exhibits superior subthreshold characteristics and current drive capability compared to the conventional mode. In addition, the off-state on-off SOI devices, conventional mode SOI devices and reverse bias Schottky barrier SOIDTMOS Wear characteristics were compared.