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研制了一种GaN p-i-n型单元器件,详细地讨论了该器件的制备工艺,并对该器件进行了光电性能测试。测试结果表明,器件的正向开启电压在2 V左右,零偏动态电阻R0约为1010~1011Ω,最大峰值响应率在365 nm处为0.18~0.21 A/W,器件的上升响应时间和下降时间分别为2.8和13.4 ns。
A GaN p-i-n type cell device was developed. The fabrication process of the device was discussed in detail and the photoelectric performance of the device was tested. The test results show that the forward turn-on voltage of the device is about 2 V, the biased dynamic resistance R0 is about 1010 ~ 1011Ω and the maximum peak response rate is 0.18 ~ 0.21 A / W at 365 nm. The response time and fall time Respectively 2.8 and 13.4 ns.