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在SiGeHBT的制造工艺中,为了防止干法刻蚀发射极台面对外基区表面造成损伤,从而导致SiGeHBT小电流下较大漏电问题,对SiGeHBT发射极台面的湿法腐蚀技术进行了研究。通过改变超声功率、腐蚀液温度,从中获得了较为理想的腐蚀条件。
In the manufacturing process of SiGeHBT, wet etching technology of SiGeHBT emitter mesa has been studied in order to prevent the dry etching of the emitter mesa from damaging the surface of the outer base, leading to large electric leakage under small current of SiGeHBT. By changing the ultrasonic power, the temperature of the etching solution, we get the ideal corrosion conditions.