研究了PV型HgCdTe探测器在1.319μm连续激光辐照下的温升效应。根据探测器的分层结构及测温Pt电阻的位置(冷面上),推断Pt电阻测得的温度并不直接反映HgCdTe芯片的温度,而是比芯片温度低很多。实验测量了Pt电阻的温升,数值模拟了Pt电阻温度随时间的变化以及探测器各层结构的温升情况,理论分析结果与实验结果相一致。 The temperature rising effect of PV-type HgCdTe detector under 1.319μm continuous laser irradiation was studied. According to the layered structure of the detector and the position of the Pt resistance (on the cold surface), it is concluded that the temperature measured by the Pt resistance does not directly reflect the temperature of the HgCdTe chip but is much lower than the chip temperature. The temperature rise of Pt resistance was measured experimentally, and the change of temperature of Pt resistance temperature was simulated numerically. The temperature rise of each layer of the detector was simulated. The theoretical analysis was consistent with the experimental results.