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利用金属蒸发真空弧(MEVVA)离子源将Si和Er离子双注入到不同厚度热氧化SiO_2/Si薄膜,获得高浓度Er掺杂硅基发光薄膜。RBS分析表明,稀土元素Er离子掺杂到热氧化SiO_2/Si薄膜中的Er原子浓度百分比达到～10at.％,即Er原子体浓度为～10~(21)/cm~3。这是高能离子注入所不能达到的,它为稀土Er离子高掺杂硅基发光薄膜的制备提供了一个新途径。XPS研究发现,热氧化SiO_2膜厚,溅射保留量多;Er以固溶态存在。在77K下,我们获得了近红外区1540 nm处较强的光致发光。氧离子对Er掺杂热氧化SiO_2/Si薄膜近红外光致发光起了很大作用,发光强度提高了3～5倍。
The metal-evaporated vacuum arc (MEVVA) ion source was used to double-implant Si and Er ions into SiO 2 / Si films with different thickness to obtain high-concentration Er-doped silicon-based light-emitting films. RBS analysis showed that the percentage of Er atoms doped with rare earth element Er ions into the thermally oxidized SiO 2 / Si film reaches -10%, ie, the concentration of Er atoms is ~ 10 ~ (21) / cm ~ 3. This can not be achieved by high-energy ion implantation, which provides a new way for the preparation of rare earth Er ion highly doped silicon-based luminescent films. XPS study found that thermal oxidation of SiO 2 film thickness, sputter retention and more; Er to solid solution exists. At 77K, we obtained strong photoluminescence at 1540 nm in the near infrared region. Oxygen ions play a great role in the near-infrared photoluminescence of Er-doped SiO 2 / Si films, and the luminescence intensity is increased by 3 to 5 times.