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本文用多粒子蒙特卡罗方法对GaAs器件中的载流子非稳态输运过程进行了模拟,解释了载流子速度过冲效应对亚微米器件性能的影响。给出了一种由P集电区、P~+缓变基区和AlGaAs/GaAs异质发射结组成的N~+P~+PN新结构,预计将对缩短基区-集电区渡越时间有明显的作用。
The multi-particle Monte Carlo method is used to simulate the unsteady carrier transport in GaAs devices. The effect of carrier velocity overshoot on the performance of submicron devices is explained. A new structure of N ~ + P ~ + PN consisting of P collector region, P ~ + graded base region and AlGaAs / GaAs heterojunction is proposed, which is expected to shorten the base-collector transition Time has a significant effect.