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硅通孔(TSV)技术是实现三维封装的一种关键技术。通过有限元分析方法,研究了三种结构硅通孔的热应力,提出聚对二甲苯填充结构在热应力方面的优越性。为了进一步研究聚对二甲苯填充结构的TSV热应力,选用不同聚对二甲苯直径、高度、硅通孔的尺寸和深宽比进行仿真,得出一系列优化结论:随着聚对二甲苯直径的增大,等效应力先增大后减小;增大聚对二甲苯的高度、减小硅通孔的直径和深宽比,有利于优化热应力;深宽比大于4时,三种结构的热应力均趋于平稳。
Through-silicon vias (TSVs) are a key enabler of 3D packaging. Through the finite element analysis method, the thermal stress of the three kinds of through-silicon vias was studied, and the superiority of the parylene filled structure in thermal stress was proposed. In order to further study the thermal stress of TSV filled with parylene, a series of optimization results were obtained by simulating the size and aspect ratio of different parylene diameters, heights and through-silicon vias. As the parylene diameter , The equivalent stress first increases and then decreases; increasing the height of parylene and reducing the diameter and aspect ratio of through-silicon vias will help to optimize the thermal stress; when the aspect ratio is greater than 4, three The thermal stress of the structure tends to be stable.