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报道了一种具有新型排列方式的垂直腔面发射半导体激光器(VCSEL)阵列。通过调制阵列中各单元直径以及单元间距,得到1 kW/cm~2的高功率密度和高斯远场分布,且在工作电流0～6 A 内远场发散角均小于20°。阵列由直径分别为200μm,150μm和100μm成中心对称分布的5个单元组成,单元圆心间距分别为250 μm和200 μm。在室温连续工作条件下,阵列在注人电流4 A时达最大输出功率880 mW,斜率效率为0.3 W/A,具有0.56 A的低阈值电流,微分电阻0.09 Ω。与具有相同出光面积的4×4二维阵列相比,这种新型阵列在出光功率、阈值电流、光谱特性及远场分布等方面均具有优越性。模拟了阵列各单元叠加后的近场远场光强分布,结果表明得到的新型阵列的远场分布与实验结果吻合较好。
A vertical cavity surface emitting semiconductor laser (VCSEL) array with a novel arrangement is reported. The high power density and Gaussian far-field distribution of 1 kW / cm ~ 2 were obtained by modulating the cell diameter and cell spacing in the array, and the far-field divergence angles were less than 20 ° in the operating current of 0-6 A. The array consisted of 5 units symmetrically distributed in center with diameters of 200μm, 150μm and 100μm, respectively. The center of the array was 250 μm and 200 μm respectively. Under continuous operation at room temperature, the array achieves a maximum output power of 880 mW at a current injection of 4 A, a slope efficiency of 0.3 W / A, a low threshold current of 0.56 A, and a differential resistance of 0.09 Ω. Compared with a 4 × 4 two-dimensional array with the same light output area, this new array has advantages in terms of light output power, threshold current, spectral characteristics and far-field distribution. The near-field far-field light intensity distribution of each array element is simulated. The results show that the far-field distribution of the new array is in good agreement with the experimental results.