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采用分子束外延（ＭＢＥ）技术，研制生长了ＩｎＧａＡｓ／ＧａＡｓ应变单量子阱激光器材料，并研究了生长温度及界面停顿生长对激光器性能的影响。结果表明，较高的ＩｎＧａＡｓ生长温度和尽可能短的生长停顿时间，将有利于降低激光器的阈值电流。所外延的激光器材料在２５０μｍ×５００μｍ宽接触、脉冲工作方式下测量的阈电流密度的典型值为１６０ｍＡ／ｃｍ２。用湿法腐蚀制作的４μｍ条宽的脊型波导激光器，阈值电流为１６ｎＡ，外微分量子效率为０４ｍＷ／ｍＡ，激射波长为９７６±２ｎｍ，线性输出功率为１００ｍＷ。
The InGaAs / GaAs strained single quantum well laser materials have been grown and grown by molecular beam epitaxy (MBE) technology. The effects of growth temperature and interfacial growth on laser performance have also been investigated. The results show that the higher InGaAs growth temperature and the shortest growth pause time will be helpful to reduce the laser threshold current. The epitaxial laser material typically has a threshold current density of 160 mA / cm2 measured in a 250 [mu] m * 500 [mu] m wide contact, pulsed operation. A 4μm wide ridge waveguide laser fabricated by wet etching has a threshold current of 16nA, an external differential quantum efficiency of 0.4mW / mA, a lasing wavelength of 976 ± 2nm and a linear output power of 100mW.