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We obtain molybdenum disulfide(MoS_2) nanosheets(NS_s) with edge sizes of 18μm by direct sulfuration of M0 O_3 powder spread on the SiO_2/Si substrates. However, the undesirable MoO_3 nanoparticles(NPs) left on the surface of MoS_2 NSs poison the MoO_3 precursor. Introducing Te vapors to react with MoS_2 to form low melting point intermediate MoS_xTe_(2-x), the evaporations of MoO_3 precursor recover and MoO_3 NPs disappear. Thus Te vapor is effective to suppress poisoning of the MoO_3 precursor. Selecting the appropriate amount of Te vapor,we fabricate monolayer MoS_2 NSs up to 70 μm in edge length. This finding can be significant to understand the role of Te in the Te-assisted chemical vapor deposition growth process of layered chalcogenide materials.
We obtained molybdenum disulfide (MoS_2) nanosheets (NS_s) with edge sizes of 18μm by direct sulfuration of M0 O_3 powders spread on the SiO_2 / Si substrates. However, the poor MoO_3 nanoparticles (NPs) left on the surface of MoS_2 NSs poison the MoO_3 precursor. Introducing Te vapors to react with MoS_2 to form low melting point intermediate MoS_xTe_ (2-x), the evaporations of MoO_3 precursor recover and MoO_3 NPs disappear. Thus the value of Te vapor is effective to suppress the poisoning of the MoO_3 precursor. of Te vapor, we fabricate monolayer MoS_2 NSs up to 70 μm in edge length. This finding can be significant to understand the role of Te in the Te-assisted chemical vapor deposition growth process of layered chalcogenide materials.