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蒸发在 Si 上的 Al 薄膜,在微波激发的 O_2+H_2混合等离子体和 O_2+N_2混合等离子体中实现了氧化。添加的 H_2或 N_2在其中起催化作用。在 Ar 离子溅射的情况下,用离子微分析(IMA)和 X 射线光电子分光(XPS)方法,分析了各元素随深度的组成变化和膜的化学结构。在 O_2+N_2混合等离子体中,观测到界面上有明显界面氧化层,但在 O_2+H_2混合等离子体中,没有发现内部 SiO_2层。为了解释这些实验现象,提出了一种氧化过程的假定方式,这种方式考虑了电负性。
The Al thin films evaporated on Si were oxidized in the microwave-excited mixed plasma of O 2 + H 2 and O 2 + N 2. The added H 2 or N 2 plays a catalytic role in it. In the case of Ar ion sputtering, the compositional variation of each element with depth and the chemical structure of the film were analyzed by means of ion microanalysis (IMA) and X-ray photoelectron spectroscopy (XPS). In O 2 + N 2 mixed plasma, obvious interface oxide layer was observed, but no internal SiO 2 layer was found in O 2 + H 2 mixed plasma. To explain these experimental phenomena, a hypothetical approach to the oxidation process was proposed, which considers the electronegativity.