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存储器的工作速度是决定计算机处理信息速度的重要因素之一。作者等计划在电气试验所正在研制的 MK-6型超高速计算机中采用隧道二极管高速存储器,现已试制成容量为17位×16字的存储器,它采用线选法,每个存储单元由一个电阻,一只隧道二极管和一只普通锗二极管组成。将其用在时钟频率为两相5兆周的小型实验样机中试验结果表明,读出时间可达100毫微秒,整个存储周期为200毫微秒。本文对其存储方式和试制装置及其实验结果作了介绍。
The working speed of memory is one of the important factors that determine the speed of computer processing information. The author plans to use tunnel diode high-speed memory in the MK-6 super-high-speed computer being developed by the Electrical Test Laboratory. It has been tried to produce a memory of 17 × 16 words, which uses a line selection method. Each memory cell is composed of A resistor, a tunnel diode and an ordinary germanium diode. It was used in a small experimental prototype with a clock frequency of 5 megabits per second and showed that the readout time was up to 100 nanoseconds and the entire storage cycle was 200 nanoseconds. This article describes its storage and trial equipment and experimental results were introduced.