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用脉冲激光沉积(pulsed laser deposition,PLD)法在玻璃基片上沉积了组分为80GeS2-15Ga2S3-5CdS的硫系非晶薄膜,利用X射线衍射、分光光度计、扫描电镜、场发射扫描电镜、Raman光谱等研究了薄膜的性能和结构。对薄膜进行紫外脉冲激光极化,采用Maker条纹法测试薄膜的二阶非线性光学效应(second harmonic generation,SHG)。结果表明:获得的硫系GeS2-Ga2S3-CdS非晶薄膜表面光滑平整、厚度约为800 nm、透过率高达78%,与靶材相比,薄膜中的缺陷较多。在紫外脉冲激光极化的薄膜中观察到了明显的SHG,强度约为参考石英单晶的两倍。
A thin film of chalcogenide with composition of 80GeS2-15Ga2S3-5CdS was deposited on a glass substrate by pulsed laser deposition (PLD). X - ray diffraction, spectrophotometer, scanning electron microscopy, field emission scanning electron microscopy, Raman spectroscopy study of the film properties and structure. The films were subjected to ultraviolet pulsed laser polarization. The second harmonic generation (SHG) of the films was tested by the Maker stripe method. The results show that the surface of chalcogenide amorphous GeS2-Ga2S3-CdS thin film is smooth and smooth, with a thickness of about 800 nm and a transmittance of 78%. Compared with the target, there are many defects in the film. A clear SHG was observed in the UV pulsed laser-polarized film, which was about twice as intense as the reference quartz single crystal.