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Nitrogen-doped nanocrystalline diamond films(N-NDFs)have been deposited on p-type silicon(Si)by microwave plasma chemical vapor deposition.The reaction gases are methane,hydrogen,and nitrogen without the conventional argon(Ar).The N-NDFs were characterized by X-ray diffraction,Raman spectroscopy,and scanning electron microscopy.The grain sizes are of 8~10 nm in dimension.The N-NDF shows n-type behavior and the corresponding N-NDF/p-Si heterojunction diodes are realized with a high rectification ratio of 102 at~7.8 V,and the current density reaches to1.35 A/cm2 at forward voltage of 8.5 V.The findings suggest that fabricated by CH_4/H_2/N_2 without Ar,the N-NDFs and the related rectifying diodes are favorable for achieving high performance diamond-based optoelectronic devices.
Nitrogen-doped nanocrystalline diamond films (N-NDFs) have been deposited on p-type silicon (Si) by microwave plasma chemical vapor deposition. The reaction gases are methane, hydrogen, and nitrogen without the conventional argon NDFs were characterized by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy. The N-NDF shows n-type behavior and the corresponding N-NDF / p-Si heterojunction diodes are realized with a high rectification ratio of 102 at ~7.8 V, and the current density reaches to 1.35 A / cm2 at forward voltage of 8.5 V. The findings suggest that fabricated by CH_4 / H_2 / N_2 without Ar, the N-NDFs and the related rectifying diodes are favorable for achieving high performance diamond-based optoelectronic devices.