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本报告叙述在174K工作的10.6微米碲镉汞温差电制冷光电二极管组件的研制,本方案的目的在于论证5×10~(-4)厘米~2面积的器件在170K工作时具有20％量子效率、50兆赫带宽和1毫安反向饱和电流。为得到重掺杂的结,而把170K下的扩散电流降到极小,对几种方法作了评价。有两个组件已交付使用,它们各有一个灵敏面积为2×10~(-4)厘米~(-2)的n-p扩散碲镉汞光电二极管装配在六级温差电制冷器上。较好的一个器件在174K工作,其最小可探测功率为7.7×10~(-19)瓦/赫,带宽为23兆赫,饱和电流为8.8毫安。组件功耗不到20瓦。
This report describes the development of a 10.6-μm HgCdTe photothermographic photodiode module operating at 174K. The purpose of this protocol is to demonstrate that a device with 5 × 10-4 cm 2 area has 20% quantum efficiency at 170K operation 50 MHz bandwidth and 1 mA reverse saturation current. Several methods have been evaluated for minimizing the diffusion current at 170K for heavily doped junctions. Two components have been delivered and each has a n-p diffusion HgCdTe photodiode with a sensitivity of 2 × 10 -4 cm -2 mounted on a six-stage thermoelectric cooler. A better device operates at 174K with a minimum detectable power of 7.7 x 10 ~ (-19) Watts / Hz, a bandwidth of 23 MHz and a saturation current of 8.8 mA. Components consume less than 20 watts.