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针对氢化微晶硅薄膜吸收系数较低、制备需要较高厚度,从而需要较高沉积速度的问题,考虑到压强对沉积速度及晶化比的重要影响,在分析了单一压强法制备薄膜优缺点的基础上,提出了采用两步法来制备高质量微晶硅薄膜的方法。即先采用高压制备薄膜2m in,减小非晶转微晶的孵化层厚度,然后再采用低压制备薄膜18m in,提高薄膜的致密度及减小氧含量,最后制备出了光敏性较高,晶化比较大并且光照稳定性也较好的优质氢化微晶硅薄膜。
In view of the low absorption coefficient of hydrogenated microcrystalline silicon thin film, the preparation needs higher thickness, which requires higher deposition speed. Considering the important influence of pressure on deposition rate and crystallization ratio, the advantages and disadvantages of single pressure method Based on the proposed two-step method to prepare high-quality microcrystalline silicon thin film method. That is to say, the film is prepared by high pressure at first for 2m in, the thickness of the incubation layer is reduced, then the low pressure is used to prepare the film for 18m in, which improves the density of the film and reduces the oxygen content. Finally, Crystallization is relatively large and good light stability of hydrogenated microcrystalline silicon thin film.