MOS(MIS)电容器C-V技术仍是目前测定半导体介质膜系统有效电荷及可动离子电荷数面密度的常用的一种基本方法。一般采用以标准电容器形式为蒸发栅(如铝)。有时用汞针,但蒸发栅较麻烦,在制作过程中还易引进新的影响。后者则不能直接做BT。因而如能制成合适的软金属接触探针比硬接触优越,较蒸栅简单,较汞针可直按做BT处理。但因材料、操作等方面的原因,软金属探针栅并未被人们真正地注意。 MOS (MIS) capacitor C-V technology is still the most commonly used method to determine the effective charge and the number density of movable charge in semiconductor dielectric film system. Commonly used in the form of a standard capacitor evaporation grid (such as aluminum). Mercury needles are sometimes used, but the evaporation grid is more cumbersome and can introduce new effects in the production process. The latter can not do BT directly. Thus if made of suitable soft metal contact probe superior than the hard contact, relatively simple steamer, mercury needle can be done straight BT treatment. However, due to material, operation and other reasons, soft metal probe grid has not been people really pay attention.