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文章介绍了一种改进型弧放电离子源,它是利用弧放电与溅射相结合的原理。源的结构是采用石英玻璃放电室,它里面又设了一个石英屏蔽。有一个环形阳极。两个LaB_6(或金属)阴极,其中一个作为引出极。专设有陶瓷法兰等。此源可以产生气体物质和金属材料的离子,并产生多电荷离子。离子流强度为1mA～14.5mA。引出系统可与高频离子源通用。这个源在北京师范大学400keV离子注入机上使用中,运行是稳定的。
This paper introduces an improved arc discharge ion source, which is a combination of arc discharge and sputtering. Source structure is the use of quartz glass discharge chamber, which also set up a quartz shield. There is a ring anode. Two LaB_6 (or metal) cathodes, one of which serves as a lead. Dedicated to ceramic flanges and so on. This source can generate ions of gaseous species and metallic materials and generate multiply charged ions. Ion current intensity of 1mA ~ 14.5mA. Lead system can be common with high frequency ion source. This source is used in Beijing Normal University 400keV ion implanter, the operation is stable.