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本文介绍一种具有高性能和高可靠性的新型低压功率MOSFET——TI公司的NexFETTM,它将一种高可靠、高性能的RF LDMOSFET与齐纳二极管组合。基于MOSFET结构的RF LDMOSFET将品质因数(Ron*Qg)改善两倍。一个纵向集成的齐纳二极管钳制峰值开关节点电压的尖峰形成,从而使MOSFET免受击穿。
This article introduces a new low-voltage power MOSFET with high performance and high reliability - TI’s NexFETTM, which combines a high-reliability, high-performance RF LDMOSFET with a Zener diode. The RF LDMOSFET based on the MOSFET structure improves the quality factor (Ron * Qg) by a factor of two. A vertically integrated zener diode clamps the spikes of the peak switching node voltage to protect the MOSFET from breakdown.