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仿真了逆导型(RC)非穿通-绝缘栅双极晶体管(NPT-IGBT)的器件结构及其“折回效应”现象的I-V特性曲线,研究了一些器件重要结构参数(背面阳极n+区域与p+区域尺寸比例Ln/Lp以及n-漂移区厚度)对所仿真的逆导型NPT-IGBT器件电流“折回效应”的影响。用“MOSFET+pin二极管”等效电路模型分析了仿真结果中得到的结论。结果表明,Ln/Lp与n-漂移区厚度对“折回效应”幅度影响显著。在n-漂移区厚度为60μm时,Ln/Lp尺寸比例在5/11和2/14(μm/μm)之间,“折回效应”幅度较低,并且反向二极管具有导通能力,可以成为对应RC-NPT-IGBT的工艺窗口;在n-漂移区厚度达到150μm时,“折回效应”接近消失,Ln/Lp尺寸比例可以有更宽的选择。
The device structure of the non-through-insulated-gate bipolar transistor (NPT-IGBT) and the IV characteristic curve of its “fold back effect” phenomenon are simulated. Some important structural parameters of the device (back surface n + region And the p + region size ratio Ln / Lp and n- drift region thickness) on the simulated reverse current NPT-IGBT device current “return effect ”. The conclusions drawn from the simulation results are analyzed using the “MOSFET + pin diode” equivalent circuit model. The results show that the thickness of Ln / Lp and n-drift region have a significant effect on the amplitude of the “foldback effect”. The Ln / Lp size ratio is between 5/11 and 2/14 (μm / μm) at a n-drift region thickness of 60 μm, the “fold-back effect” is low and the reverse diode has conductivity, Can become a process window corresponding to the RC-NPT-IGBT. When the thickness of the n-drift region reaches 150μm, the “fold-back effect” nearly disappears, and the Ln / Lp size ratio can have a wider choice.