The degradation of gate-induced drain leakage(GIDL) current in LDD nMOSFET under hot holes stress is studied in depth based on its parameter I_(DIFF).I_(DIFF) is the difference of GIDL currents measured under two conditions of drain voltage V_D=1.4 V and gate voltage V_G=-1.4 V while V_(DG) is fixed.After the stress GIDL currents decay due to holes trapping in the oxide around the gate-to-drain overlap region.These trapped holes diminishΔE_X which is the deference of the lateral electrical field of these two symmetrical measurement conditions in the overlap region so as to make I_(DIFF) lessening.I_(DIFF) extracted from GIDL currents decreases with increasing stress time t.The degradation shifts of I_(DIFF,MAX)(ΔI_(DIFF,MAX)) follows a power law against t:ΔI_(DIFF,MAX)∝t~m, m= 0.3.Hot electron stress is performed to validate the related mechanism. The degradation of gate-induced drain leakage (GIDL) current in LDD nMOSFET under hot holes stress is studied in depth based on its parameter I_ (DIFF). I_ (DIFF) is the difference of GIDL currents measured under two conditions of drain voltage V_D = 1.4 V and gate voltage V_G = -1.4 V while V_ (DG) is fixed. After stress GIDL currents decay due to holes trapping in the oxide around the gate-to-drain overlap region. The trapped holes diminish ΔE_X which is the deference of the lateral electrical field of these two symmetrical measurement conditions in the overlap region so as to make I_ (DIFF) lessening. I_ (DIFF) extracted from increasing stress time t. The degradation shifts of I_ (DIFF, MAX) (ΔI_ (DIFF, MAX)) follows a power law against t: ΔI_ (DIFF, MAX) αt ~ m, m = 0.3.