通过研究掺镁、掺锌和掺铟同成分铌酸锂晶体的紫外-红光双色全息存储性能,发现双色记录响应时间均比单色记录时明显缩短,最多的可减小3个数量级;双色记录灵敏度大幅度提高,在掺镁5mol.%的晶体中可达到1.1cm/J.在掺杂浓度超过抗光损伤阈值的铌酸锂晶体中,均可实现非挥发全息存储.但是,在掺镁、锌样品中,深、浅能级中心上的光栅反相,而在掺铟样品中则表现为同相.这是由于掺杂离子的种类不同,在铌酸锂晶体中形成的缺陷中心也不同所引起的. By investigating the UV-red two-color holographic storage properties of MgO, Zn and In-doped LiNbO 3 crystals, it was found that the two-color recording response time was significantly shorter than that of monochrome recording, up to 3 orders of magnitude. The recording sensitivity is greatly improved, reaching 1.1cm / J in 5mol.% Of Mg-doped crystals. Non-volatile holographic storage can be achieved in lithium niobate with doping concentration exceeding the threshold of light damage. However, In the Mg and Zn samples, the gratings in the deep and shallow level centers are reversed-phase and in the case of indium-doped samples, they are in-phase due to the different types of doping ions and the formation of defect centers in lithium niobate crystals Caused by different