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针对超深亚微米层次下的金属互连设计,使用Raphael(集成布线互连)仿真系统完成了互连寄生效应参数的提取。介绍了Raphael仿真系统的主要功能及基本应用,并分析了常规集成布线互连参数模型。采用二层跨越式互连结构,对寄生电阻、电容参数进行了仿真,并得到电流密度的分布结果。这些参数的提取及验证对电路的布局设计是十分重要的。
For metal interconnect design at ultra-deep sub-micron level, the parasitic effect parameters of interconnection are extracted using the Raphael (Integrated Routing Interconnect) simulation system. The main functions and basic applications of the Raphael simulation system are introduced, and the parameters of the conventional integrated wiring interconnection are analyzed. The double-layer leap-type interconnect structure is used to simulate the parasitic resistance and capacitance parameters, and the distribution of current density is obtained. The extraction and verification of these parameters is very important to the circuit layout design.