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采用氢电弧放电法直接制备了无定形氧化硅包覆单壁碳纳米管同轴纳米电缆。纳米电缆的长度为几微米到数十微米,直径约为10～30 nm。纳米电缆的外包覆层为无定形氧化硅,每根电缆的芯部包含1根到几根单壁碳纳米管。单壁碳纳米管具有较高的结晶度,其直径主要集中在2.2 nm和1.8 nm。基于实验研究结果,提出了一种纳米电缆的生长机制。所制备的无定形氧化硅包覆单壁碳纳米管纳米电缆可望用于场效应晶体管等纳电子器件的构建。
The amorphous silicon oxide coated single-walled carbon nanotube coaxial nanocables were prepared directly by hydrogen arc discharge method. Nanometer cable length of several microns to tens of microns, a diameter of about 10 ~ 30 nm. The outer sheath of the nano-cable is amorphous silicon oxide, and the core of each cable contains 1 to several single-walled carbon nanotubes. Single-walled carbon nanotubes have higher crystallinity and their diameters are mainly concentrated at 2.2 nm and 1.8 nm. Based on the experimental results, a nanometer cable growth mechanism is proposed. The prepared amorphous silicon oxide coated single-wall carbon nanotube nano-cable is expected to be used for the construction of field-effect transistor and other nano-electronic devices.