【摘 要】
：
分析了N型HG面空间电荷层中的表面电势的变化情况 ,计算了Auger复合寿命及光导器件的探测率 ,讨论了表面电荷密度、表面附合速率及器件厚度对探测器性能的影响。结果表明 ,在
【机 构】
：
山东建筑工程学院基础部!山东济南250014,山东大学红外遥感研究室!山东济南250100
论文部分内容阅读
分析了N型HG面空间电荷层中的表面电势的变化情况 ,计算了Auger复合寿命及光导器件的探测率 ,讨论了表面电荷密度、表面附合速率及器件厚度对探测器性能的影响。结果表明 ,在非本征条件下 ,对N型HgCdTe光导探测器 ,当表面附合速率及表面电荷密度确定后 ,对器件探测率存在一最优厚度。
The change of surface potential in space charge layer of N-type HG surface was analyzed. The Auger recombination lifetime and the detection rate of photoconductive device were calculated. The influence of surface charge density, surface attachment rate and device thickness on the detector performance was discussed. The results show that under the extrinsic condition, there is an optimal thickness for the N-type HgCdTe photoconductive detector when the surface attachment rate and surface charge density are determined.
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