论文部分内容阅读
采用射频磁控溅射法在单晶硅表面制备了类金刚石薄膜;对薄膜的电阻率进行了测量,研究了薄膜的溅射工艺参数,采用拉曼光谱、原子力显微镜、扫描电镜分析了薄膜的结构、表面形貌以及薄膜的截面形貌。结果表明,薄膜中含有sp2、sp3杂化碳原子,拉曼谱高斯拟合峰的ID/IG为3.67;薄膜的电阻率达6×103Ωcm。最佳溅射气压在0.4 Pa左右,最佳溅射功率在140 W左右;薄膜的表面平整光滑,平均粗糙度低达0.17 nm;SEM形貌表明薄膜由大量大小均匀的碳颗粒组成,薄膜内部十分致密,与基底结合很好。
DLC films were prepared on the surface of single crystal silicon by radio frequency magnetron sputtering. The resistivity of the films was measured. The sputtering parameters of the films were investigated. Raman spectroscopy, atomic force microscopy and scanning electron microscopy Structure, surface morphology and cross-sectional morphology of the film. The results show that the films contain sp2 and sp3 hybrid carbon atoms. The ID / IG of the Gaussian fitting peak of Raman spectra is 3.67. The resistivity of the film is 6 × 103Ωcm. The optimal sputtering pressure is about 0.4 Pa and the optimum sputtering power is about 140 W. The surface of the film is smooth and the average roughness is as low as 0.17 nm. The SEM morphology shows that the film consists of a large number of carbon particles with uniform size. Very dense, well combined with the substrate.