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桥面多层膜系残余应力匹配是消除太赫兹微测辐射热计微桥结构形变的重要手段.仿真建立了像元尺寸为35μm×35μm微桥单元有限元模型.基于实验设计(DOE)正交法,采用IntelliSuite软件进行应力仿真,获得支撑层、钝化层、电极层、热敏层、吸收层应力分别为+200 Mpa、+200 Mpa、+200 Mpa、0 Mpa、-400 Mpa的最佳应力组合,最小微桥单元形变(0.0385μm).通过各膜层残余应力控制,制备出基于该优化微桥单元结构的320×240太赫兹焦平面阵列,获得与仿真结果相符的极小形变微桥.
Residual stress matching of multi-film bridge deck is an important means to eliminate the micro-bridge structure deformation of terahertz microbolometer. The micro-bridge finite element model with 35μm × 35μm pixel size is established. Based on DOE At the same time, using the software IntelliSuite to simulate the stress, the stress of support layer, passivation layer, electrode layer, thermal layer and absorption layer are respectively +200 Mpa, +200 Mpa, +200 Mpa, 0 Mpa, -400 Mpa (0.0385μm) .Through the residual stress control of each layer, a 320 × 240 THz focal plane array based on the optimized micro-bridge unit structure was fabricated, and the minimum deformation was obtained in accordance with the simulation results Micro-bridge.