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本文阐述了等离子增强化学汽相淀积(PECVD)氮化硅膜的生长原理和方法;对于在不同衬底,如Si,特别是GaAs和金属膜上淀积氮化硅膜的各种影响因素进行了理论和实验分析;针对GaAs上淀积氮化硅膜的特殊现象提出了新的解释;推导出了SiN膜性能参数Si/N、折射率、Si-H键和N-H键密度等量之间关系的经验公式;研完了MNM电容上下电极对SiN性能的影响,指出用Ti-Pt-Au做下电极,Al做上电极可以提高电容耐压;确立了优化的条件,在较低温度(200～300℃)下生长出了氧含量极低、致密耐击穿电压高的优质SiN膜,该介质膜实用于半导体单片集成电路和高耐薄膜电容。
This paper describes the growth principle and method of plasma enhanced chemical vapor deposition (PECVD) of silicon nitride film; various factors affecting the deposition of silicon nitride film on different substrates, such as Si, especially GaAs and metal films The theoretical and experimental analysis are carried out. A new explanation is given for the special phenomenon of depositing the silicon nitride film on GaAs. The SiN, Si, N, refractive index, Si-H bond and NH bond density are deduced The relationship between the MNM capacitance of the upper and lower electrodes on the performance of SiN, pointed out that the use of Ti-Pt-Au as the bottom electrode, Al as the upper electrode can increase the capacitor voltage; established optimized conditions at a lower temperature ( 200 ~ 300 ℃) under the growth of a very low oxygen content, high breakdown voltage breakdown of high-quality SiN film, the dielectric film is used in semiconductor monolithic integrated circuits and high resistance to thin film capacitors.