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研究了MOCVD生长的GaN及掺MgGaN薄膜从78到578K下的喇曼散射谱.在GaN和掺MgGaN的谱中都观察到一个位于247cm-1的峰,此峰被认为是缺陷诱导的散射峰,而非电子散射和Mg的局域模.同时讨论了两个谱中E2和A1(LO)声子峰的频率和线形.在掺MgGaN样品中观察到应力松弛现象.
The Raman scattering spectra of MOCVD-grown GaN and Mg-doped MgGaN thin films from 78 to 578 K were investigated. A peak at 247 cm -1 was observed in the GaN and Mg-doped MgGaN spectra and was considered as a defect-induced scattering peak , Rather than the electron scattering and the local mode of Mg. The frequencies and line shapes of the phonon peaks of E2 and A1 (LO) in the two spectra are also discussed. Stress relaxation is observed in the MgGaN-doped samples.