采用射频等离子体增强化学气相沉积法,在不同条件下制备了含氮氟非晶碳膜,着重考察了退火温度对膜结构和光学带隙的影响.研究发现:在350℃时,膜仍很稳定,当退火温度达到400℃时,其内各化学键的相对含量发生很大的改变.膜的光学带隙随着退火温度的升高而增大,红外和拉曼光谱分析显示其原因是:退火使得膜内F的相对浓度降低,sp2相对含量升高,导致σ-σ*带边态密度降低. The films were prepared by RF plasma enhanced chemical vapor deposition (CVD) and nitrogen-fluorine-containing amorphous carbon films were prepared under different conditions. The effects of annealing temperature on the structure and optical band gap of the films were investigated emphatically. Stable, the relative content of each chemical bond changed greatly when the annealing temperature reached 400 ℃ .The optical band gap of the film increased with the increase of the annealing temperature.The results of IR and Raman spectroscopy showed that: Annealing makes the relative concentration of F decreased membrane, sp2 relative content increased, leading to σ-σ * band edge density decreased.