论文部分内容阅读
对近空间蒸发系统制备的同一CdTe薄膜进行分割并在不同条件下进行退火,通过XRD、SEM、电导温度关系以及XPS等研究退火后薄膜结构,各元素含量分布以及价态变化。结果表明:刚沉积的CdTe薄膜呈立方相,沿(111)明显的择优取向,退火后(111)(220)(311)等峰的强度有不同程度的增强。晶粒长大,晶界减小,降低通过晶界载流子复合概率,降低暗电导激活能,改善电池的并联电阻和漏电流。XPS测试表明样品中存在碲的氧化物,而且随着刻蚀深度的增加氧化物明显减少。通过分析,认为样品中可能存在TeClO2的结构单元,导致薄膜性能的改变。样品表面氧元素含量较多,随着刻蚀深度的增加,氯氧2种元素的含量明显减少,而且氯元素在样品中达到了稳定的分布。
The same CdTe film prepared by near-space evaporation system was segmented and annealed under different conditions. The structure, content distribution and valence state of the annealed films were investigated by XRD, SEM, temperature dependence and XPS. The results show that the as-deposited CdTe thin films are cubic phase with obvious preferential orientation along (111), and the intensities of the (111) (220) (311) peaks increase to some extent after annealing. Grain growth, the grain boundary decreases, reducing the probability of carrier recombination through the grain boundaries, reducing the dark conductivity activation energy, improve the battery parallel resistance and leakage current. The XPS test showed the presence of tellurium oxide in the sample, and the oxide significantly decreased with increasing depth of etching. Through the analysis, it is considered that there may be structural units of TeClO2 in the sample, resulting in the change of film properties. The oxygen content of the sample surface is more, with the increase of the etching depth, the content of the two kinds of elements of oxygen and oxygen decreases obviously, and the chlorine element reaches the stable distribution in the sample.